| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ITO sputtering target which is high in density, comprised of an ITO sintered compact having a low tin oxide content, can form an ITO thin film of high crystallinity, and can form the stable film over a long time. <P>SOLUTION: As raw material powder, there are used indium oxide powder having 3-15 m<SP POS="POST">2</SP>/g of a specific surface area value and 0.1-0.5 μm of an average particle diameter, and tin oxide powder having 10-15 m<SP POS="POST">2</SP>/g of a specific surface area value and 0.1-1.5 μm of an average particle diameter, and the content of a tin oxide is adjusted to a range of 2.5-5.2 mass%. They are mixed and crushed, and press-formed at a pressure of 196 MPa or higher and calcined in an oxygen atmosphere of normal pressure under the condition that a temperature increase rate is 1.0-5.0°C/minute in a region of 1,000°C or higher, a retention temperature is 1,500-1,600°C and a retention time is 20-30 hours to set the average density of the obtained ITO sputtering target at 7.1 g/cm<SP POS="POST">3</SP>, and the average crystal grain diameter at 3 μm or larger and smaller than 10 μm. <P>COPYRIGHT: (C)2012,JPO&INPIT |
