发明名称 METHOD AND APPARATUS PERTAINING TO A FERRO-MAGNETIC RANDOM ACCESS MEMORY
摘要 An FRAM device can comprise a sense amplifier, at least a first bitcell, a first control line, and a second control line. The first bitcell can have a bit line that connects to the sense amplifier via a first isolator and a complimentary bit line that connects to the sense amplifier via a second isolator that is different from the first isolator. The first control line can connect to and control the aforementioned first isolator. And the second control line can connect to and control the second isolator such that the second isolator is independently controlled with respect to the first isolator to facilitate testing the device.
申请公布号 US2012170350(A1) 申请公布日期 2012.07.05
申请号 US201113243875 申请日期 2011.09.23
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 CLINTON MICHAEL PATRICK;BARTLING STEVEN CRAIG;SUMMERFELT SCOTT;MCADAMS HUGH
分类号 G11C11/22 主分类号 G11C11/22
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