发明名称 MEMORY SYSTEM WITH SECTIONAL DATA LINES
摘要 The system includes multiple sets of local data lines in one or more routing metal layers below the three-dimensional memory array and multiple sets of global data lines in one or more top metal layers above the three-dimensional memory array. Each set of one or more blocks include one set of the local data lines. Each bay includes one set of global data lines that connect to the group of sense amplifiers associated with the blocks of the respective bay. Each block includes a subset of first selection circuits for selectively coupling a subset of array lines of the first type to respective local data lines. Each block includes a subset of second selection circuits for selectively coupling a subset of the respective local data lines to global data lines associated with a respective bay.
申请公布号 US2012170346(A1) 申请公布日期 2012.07.05
申请号 US201213362311 申请日期 2012.01.31
申请人 YAN TIANHONG;FASOLI LUCA 发明人 YAN TIANHONG;FASOLI LUCA
分类号 G11C5/02 主分类号 G11C5/02
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