发明名称 |
FLAT RESPONSE DEVICE STRUCTURES FOR BIPOLAR JUNCTION TRANSISTORS |
摘要 |
Bipolar transistors with tailored response curves, as well as fabrication methods for bipolar transistors and design structures for BiCMOS integrated circuits. The bipolar transistor includes a first section of a collector region implanted with a first dopant concentration and a second section of the collector region implanted with a second dopant concentration that is higher than the first dopant concentration. A first emitter is formed in vertical alignment with the first section of the collector region. A second emitter is formed in vertical alignment with the second section of the collector region.
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申请公布号 |
US2012168907(A1) |
申请公布日期 |
2012.07.05 |
申请号 |
US20110984359 |
申请日期 |
2011.01.04 |
申请人 |
MALLADI RAMANA M.;NEWTON KIM M.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MALLADI RAMANA M.;NEWTON KIM M. |
分类号 |
H01L29/73;G06F17/50;H01L21/331 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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