| 摘要 |
A nitride-based semiconductor device includes a p-type AldGaeN layer 25 whose growing plane is an m-plane and an electrode 30 provided on the p-type AldGaeN layer 25. The AldGaeN layer 25 includes a p-AldGaeN contact layer 26 that is made of an AlxGayInzN (x+y+z=1, x≧0, y>0, z≧0) semiconductor, which has a thickness of not less than 26 nm and not more than 60 nm. The p-AldGaeN contact layer 26 includes a body region 26A which contains Mg of not less than 4×1019 cm−3 and not more than 2×1020 cm−3 and a high concentration region 26B which is in contact with the electrode 30 and which has a Mg concentration of not less than 1×1021 cm−3.
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