HALF-TONE MASK, HALF-TONE MASK BLANK, AND METHOD FOR PRODUCING HALF-TONE MASK

摘要

[Problem] To provide a half-tone mask wherein side etching of an etching stopper layer can be suppressed in a cleaning process that uses concentrated sulfuric acid. [Solution] The half-tone mask is provided with a transmissive part (TA), a semi-transmissive part (HA) and a light-blocking part (PA). The light-blocking part (PA) comprises a substrate (S), a semi-transmissive layer (11), a light-blocking layer (13) that is arranged on the semi-transmissive layer and formed of Cr or a Cr compound, and an etching stopper layer (12) that is arranged between the semi-transmissive layer (11) and the light-blocking layer (13). The etching stopper layer (12) contains a first element and a second element. The first element is composed of at least one element selected from the group consisting of Mo and W and has a compositional ratio of 6.4-38.2 mol% (inclusive). The second element is composed of at least one element selected from the group consisting of Zr, Nb, Hf and Ta.