| 摘要 |
920,630. Semi-conductor devices. SHOCKLEY TRANSISTOR CORPORATION. Feb. 24, 1960 [March 6, 1959], No. 6535/60. Class 37. A switching matrix is produced by providing two series of semi-conductor elements, each series being connected to and formed on a metallic strip; the elements are then tested and suitable elements from each strip are crossconnected to form the matrix. Fig. 1 shows such an arrangement comprising semi-conductor elements 10-14 and 17-21. Fig. 3 shows a PNPN memory element consisting of 4 layers 43-46 of alternate conductivity types adjacent an N-type layer 50 which acts as a resistor between layer 46 and electrode 42. N-type layer 50 also co-operates with P-layer 48 to form an avalanche diode in parallel with the resistor so that current first increases linearly with voltage, and then suddenly when the avalanche diode breaks down to provide a low impedance. Alternatively, diffused base transistors or multiple gate field effect transistors may be used. The electrode 42 may consist of molybdenum and the semi-conductor of silicon, the second electrode being provided by gold plating layer 43. The strip shown in Fig. 3 may be cut after the various layers have been provided to form a plurality of separate units; cutting may be effected by etching, or supersonic magneto-strictive means. The assembly may be placed in a sealed ceramic box. Fig. 4 (not shown) shows a matrix composed of crossconnected switching semi-conductor elements. Specification 920,628 is referred to. |
