| 摘要 |
920,628. Semi-conductor devices. SHOCKLEY TRANSISTOR CORPORATION. Oct. 13, 1959 [Nov. 21, 1958], No. 34675/59. Class 37. A semi-conductor switching array comprising a plurality of switching devices is produced by providing a plurality of parallel ohmic contacts on each surface of a slice of semi-conductor material having the desired layer structure for the switching device, and removing the material from between the contacts to form a device at each cross-over point. Figs. 1 and 3 show such an array having 10 conductors in each of the groups 12 and 13 with a four-layer switching device 14 at each cross-point. The arrangement is produced by applying the parallel conductors to a slice of semi-conductor material of the desired structure and then etching away the unwanted material to leave separate switching devices at each cross-point. The conductors may consist of molybdenum or tungsten, if desired gold-plated, which resists an etchant such as a mixture of hydrofluoric and nitric acids. The semi-conductor structure may be of the type described in Specification 814,913 in which a PNPN layer device is produced by diffusion through spaces in an oxide layer on the semi-conductor, to provide highly doped inner regions which provide the breakdown characteristic, surrounded by regions of lower conductivity which provide the holding current characteristic; etching is carried out so as to leave a device comprising these inner and surrounding regions at each cross-over point. The parallel conductors may be applied simultaneously as fingers projecting from a common section which is later removed to provide the separate conductor elements. The top and/or bottom layers of the PNPN structure may be left on the conductors interconnecting the devices, provided all three PN junctions are exposed. The assembly may be housed in a sealed ceramic case. Additional conductors may be provided so that faulty switching devices can be excluded from the array. |
