发明名称 PLASMA TREATMENT ON SEMICONDUCTOR WAFERS
摘要 A semiconductor wafer has integrated circuits formed thereon and a top passivation layer applied. The passivation layer is patterned and selectively etched to expose contact pads on each semiconductor die. The wafer is exposed to ionized gas causing the upper surface of passivation layer to roughen and to slightly roughen the upper surface of the contact pads. The wafer is cut to form a plurality of semiconductor dies each with a roughened passivation layer. The plurality of semiconductor dies are placed on an adhesive layer and a reconstituted wafer formed. Redistribution layers are formed to complete the semiconductor package having electrical contacts for establishing electrical connections external to the semiconductor package, after which the wafer is singulated to separate the dice.
申请公布号 US2012168938(A1) 申请公布日期 2012.07.05
申请号 US201113327563 申请日期 2011.12.15
申请人 GAN KAH WEE;JIN YONGGANG;RAMASAMY ANANDAN;LIU YUN;STMICROELECTRONICS PTE LTD. 发明人 GAN KAH WEE;JIN YONGGANG;RAMASAMY ANANDAN;LIU YUN
分类号 H01L23/488;H01L21/78 主分类号 H01L23/488
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