| 发明名称 |
EPITAXIAL STRUCTURE AND METHOD FOR MAKING THE SAME |
| 摘要 |
A method for making an epitaxial structure includes: (a) providing a sacrificial layer on a temporary substrate, the sacrificial layer being made of gallium oxide; and (b) growing epitaxially an epitaxial layer unit over the sacrificial layer.
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| 申请公布号 |
US2012168914(A1) |
申请公布日期 |
2012.07.05 |
| 申请号 |
US201113331530 |
申请日期 |
2011.12.20 |
| 申请人 |
WUU DONG-SING;HORNG RAY-HUA;TSAI TSUNG-YEN;NATIONAL CHUNG-HSING UNIVERSITY |
发明人 |
WUU DONG-SING;HORNG RAY-HUA;TSAI TSUNG-YEN |
| 分类号 |
H01L21/20;H01L29/06 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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