发明名称 |
Photosensor and Method of Manufacturing the Same |
摘要 |
In a photosensor and a method of manufacturing the same, the photosensor comprises: an intrinsic silicon layer formed on a substrate; a P-type doped region formed in a same plane with the intrinsic silicon layer; and an oxide semiconductor layer formed on or under the intrinsic silicon layer, and overlapping an entire region of the intrinsic silicon layer.
|
申请公布号 |
US2012168745(A1) |
申请公布日期 |
2012.07.05 |
申请号 |
US201113239627 |
申请日期 |
2011.09.22 |
申请人 |
OH JAE-HWAN;LEE WON-KYU;JIN SEONG-HYUN;CHANG YOUNG-JIN;CHOI JAE-BEOM;SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
OH JAE-HWAN;LEE WON-KYU;JIN SEONG-HYUN;CHANG YOUNG-JIN;CHOI JAE-BEOM |
分类号 |
H01L31/0264;H01L31/20 |
主分类号 |
H01L31/0264 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|