CMP SLURRY COMPOSITION FOR SELECTIVELY POLISHING A SILICON NITRIDE LAYER, AND METHOD FOR POLISHING A SILICON NITRIDE LAYER USING SAME

摘要

The present invention relates to a CMP slurry composition for selectively polishing a silicon nitride layer, and to a method for polishing a silicon nitride layer using same. More particularly, the present invention relates to a CMP slurry composition for selectively polishing a silicon nitride layer, which can selectively polish a silicon nitride layer by means of comprising both a (meth)acrylate copolymer and a pyrimidine compound to increase the polishing speed of a silicon nitride layer relative to a silicon oxide layer and/or polysilicon. The invention also relates to a method for polishing a silicon nitride layer using the CMP slurry composition.