| 摘要 |
Voltage regulator structures and methods embodiments are provided which employ a high-side N-type switching transistor to thereby enhance system efficiency and also reduce the die area required by these regulator structures. This structure and its advantages, however, require a gate drive signal higher than the input voltage of the voltage regulator. The embodiments resolve this need with a bias capacitor in a bootstrapped arrangement and a control loop arranged to maintain a bias voltage across the capacitor sufficient to always insure rapid switching of the high-side switching transistor during a pulse-width modulation (PWM) operational mode. The embodiments further include a second control loop arranged to insure sufficient voltage across the capacitor during a pulse-frequency modulation (PFM) operational mode. |
