| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ball which does not cause pad damage by preventing increase in hardness due to alloying of the ball surface and enhancing the palladium film-forming properties of the ball surface, and to provide a bonding wire for a semiconductor device in which a bump having good bondability is formed, and occurrence of ball lift is prevented in a pull test after being left, as it is, under high temperature generated due to pad damage, and a connection wire of a semiconductor device made of palladium-coated copper suitable for bump wire. <P>SOLUTION: The connection wire of a semiconductor device is produced by coating a core material containing copper as a main component with palladium. An intermediate layer containing 5-40 at% of carbon is provided between a palladium-coated layer containing 50 at% or more of palladium and the core material containing 50 at% or more of copper component. <P>COPYRIGHT: (C)2012,JPO&INPIT |
