发明名称 METHOD FOR FABRICATING FINE PATTERN BY USING SPACER PATTERNING TECHNOLOGY
摘要 A method for fabricating a fine pattern includes forming a line-shaped partition pattern on an underlayer, adhering a first spacer to the sides of the partition pattern, dividing the first spacer into two line patterns where one line pattern has one end bent by selectively etching the first spacer portion with a division region, adhering a second spacer, which has a connection protrusion filling the division region and connecting to the partition pattern, to the outer side of the two line patterns, and selectively removing the two line patterns.
申请公布号 US2012171867(A1) 申请公布日期 2012.07.05
申请号 US201113187581 申请日期 2011.07.21
申请人 KIM JIN SOO;HYNIX SEMICONDUCTOR INC. 发明人 KIM JIN SOO
分类号 H01L21/31;H01L21/311 主分类号 H01L21/31
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