发明名称 |
METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORIES |
摘要 |
A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction. |
申请公布号 |
US2012170362(A1) |
申请公布日期 |
2012.07.05 |
申请号 |
US201213415261 |
申请日期 |
2012.03.08 |
申请人 |
APALKOV DMYTRO;NIKITIN VLADIMIR;DRUIST DAVID;WATTS STEVEN M.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
APALKOV DMYTRO;NIKITIN VLADIMIR;DRUIST DAVID;WATTS STEVEN M. |
分类号 |
G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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