SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL AND GROWING METHOD THEREFOR

摘要

Disclosed are a semi-insulating silicon carbide single crystal and a growing method therefor. The semi-insulating silicon carbide single crystal contains intrinsic impurities, a deep energy level dopant, and intrinsic point defects, wherein the intrinsic impurities are impurities that are not intentionally doped and introduced in production and preparation, the deep energy level dopant and the intrinsic point defects are intentionally doped or added to compensate the intrinsic impurities; the intrinsic impurities comprise a shallow donor impurity and a shallow acceptor impurity, a sum of the concentrations of the deep energy level dopant and the intrinsic point defects is higher than a difference between the concentrations of the shallow-donor impurity and the shallow-acceptor impurity, and the concentration of the intrinsic point defects is lower than that of the deep energy level dopant. The semi-insulating SiC single crystal has a resistivity at room temperature of higher than 1 x 105O·cm or higher, and an electrical performance and a crystal quality that meet the corresponding requirements for production of microwave devices. In the present invention, the deep energy level dopant and the intrinsic point defects jointly serve to compensate the shallow intrinsic impurities, so as to obtain a high-quality semi-insulating single crystal.