POST CU CHEMICAL MECHANICAL POLISHING CLEANING SOLUTION

摘要

PURPOSE: A cleaning solution for cleaning process after copper chemical mechanical polishing is provided to improve manufacture yield of semiconductor device and removal strength. CONSTITUTION: A cleaning solution for cleaning process after copper chemical mechanical polishing comprises ethylenediaminetetraacetate, 5-aminotetrazole, and a pH adjusting agent consisting of a basic compound. The concentration of the ethylenediaminetetraacetate is 0.006-0.3 M. The concentration of 5- aminotetrazole is 0.001-0.15 M. The basic compound is one or more selected from potassium hydroxide, tetramethylammonium hydroxide, and sodium hydroxide. The washing solution additionally includes one or more components selected from tetramethylammonium hydroxide, RE610, and alcohol ether sulfate.