SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve productivity of the semiconductor device by preventing a GOIF(Gate Oxide Integrity Fail) and an USIF(Unlimited Sensing Delay Fail) due to an oxidation of a buried gate. CONSTITUTION: A semiconductor device includes a cell area(I) and a peripheral circuit(II). An element isolation film determining an active area(105) is formed on the cell area. A buried gate(125a) is formed on the cell area. A bit-line contact plug(130) is formed on the active area between the buried gates. A guard ring active area is included at boundary of the cell area and the peripheral area.