| 发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL, CRYSTAL PRODUCTION DEVICE, AND GROUP 13 NITRIDE SEMICONDUCTOR CRYSTAL |
| 摘要 |
<p>Provided is a method for producing a semiconductor crystal, wherein, when a semiconductor crystal is produced by crystal growth in the presence of a supercritical and/or subcritical solvent in a reaction vessel, at least part of the surface of the reaction vessel and the surface of a member used for the interior of the reaction vessel are coated with a platinum group-group 13 metal alloy film.</p> |
| 申请公布号 |
WO2012090918(A1) |
申请公布日期 |
2012.07.05 |
| 申请号 |
WO2011JP80031 |
申请日期 |
2011.12.26 |
| 申请人 |
MITSUBISHI CHEMICAL CORPORATION;FUJISAWA HIDEO;MIKAWA YUTAKA |
发明人 |
FUJISAWA HIDEO;MIKAWA YUTAKA |
| 分类号 |
C30B7/10;C30B29/38 |
主分类号 |
C30B7/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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