COMPOSITION FOR RESIST UNDERLAYER FILM AND METHOD OF FORMING PATTERNS AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: A hard mask composition, a method for forming patterns using the same, and a semiconductor integrated circuit device including the patterns are provided to secure resistance to multiple etching and to increase etching selectivity. CONSTITUTION: A hard mask composition includes an aromatic ring containing polymer, a carbon structure, and a solvent. The carbon structure includes carbon nano-tubes, carbon block, carbon fiber, or the combination of the same. The content of the carbon structure is between 0.1 and 20 weight% based on the total content of the aromatic ring containing polymer and the carbon structure. The aromatic ring containing polymer includes a compound represented by chemical formula 1. In chemical formula 1, R1 to R4 are respectively hydrogen elements, hydroxyl groups, substituted or non-substituted C1 to C20 alkyl groups, substituted or non-substituted C3 to C20 cycloalkyl groups, substituted or non-substituted C6 to C20 aryl groups, substituted or non-substituted C7 to C20 arylalkyl groups, substituted or non-substituted C1 to C20 heteroalkyl groups, substituted or non-substituted C2 to C20 heterocycloalkyl groups, substituted or non-substituted C2 to C20 alkenyl groups, substituted or non-substituted C2 to C20 alkynyl groups, substituted or non-substituted C1 to C20 alkoxy groups, halogen elements, halogen containing groups, or the combination of the same; R5 and R6 are respectively single bonds, substituted or non-substituted C1 to C20 alkylene groups, substituted or non-substituted C3 to C20 cycloalkylen groups, substituted or non-substituted C6 to C20 arylene groups, substituted or non-substituted C7 to C20 arylalkylene groups, substituted or non-substituted C1 to C20 heteroalkylene groups, and substituted or non-substituted C2 to C20 heterocyclo alkylene groups, or the combination of the same; and n is 3 to 200.