| 摘要 |
PURPOSE: A method for fabricating a solar cell is provided to maximize the power generation efficiency of a solar cell by minimizing the size of contact resistance. CONSTITUTION: A silicon substrate of a first conductivity type is prepared(S100). An impurity ion is implanted into an upper layer of a substrate(S110). A heavily doped region is formed in a semiconductor layer of a second conductivity type(S120). A mask pattern having an opening in the surface of substrate is formed(S130). A metallic member is spread on the substrate through a sputtering method and the metal layer is deposited(S140). A heat treatment of the metal layer is performed(S150). A silicide is formed on a high doped region(S160). A metal paste and electrode are formed in the silicide(S180). |
