| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a multibit magnetic random access memory cell with an improved read margin. <P>SOLUTION: A magnetic random access memory (MRAM) cell including a tunnel barrier layer 22 between a first magnetic layer 21 having a first magnetization direction and a second magnetic layer 23 having a second magnetization direction. The second magnetization direction is adjustable from a first to a second direction, with respect to the first magnetization direction. The magnetic tunnel junction further includes a switching resistant element 62 electrically connected to the magnetic tunnel junction, and has a switching resistance switchable from a first to a second switching resistance level when a switching current is passed through the switching resistant element. Thereby, a resistance of the MRAM cell can have at least four different cell resistance levels depending on the resistance level of the junction resistance and the switching resistance. <P>COPYRIGHT: (C)2012,JPO&INPIT |
