发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which a failure in a memory chip can be prevented without reducing throughput. <P>SOLUTION: A semiconductor memory device includes a nonvolatile semiconductor memory having a plurality of memory regions which are operable independently, respectively, a plurality of memory interfaces each of which executes access of data to the plurality of memory regions and outputs a data transfer request to a transfer management section when an accessible state is provided, and a temporary storage buffer which temporarily stores data. An ECC processing section executes ECC processing for data which are to be distributively written into the plurality of memory regions of the nonvolatile semiconductor memory or data which have been distributively written into the plurality of memory regions, while using data being transferred between the temporary storage buffer and the plurality of memory interfaces. The transfer management section determines whether to execute ECC processing for data related to data transfer and causes the ECC processing section to execute ECC processing only for data determined to execute ECC processing. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012128660(A) 申请公布日期 2012.07.05
申请号 JP20100279505 申请日期 2010.12.15
申请人 TOSHIBA CORP;TOSHIBA INFORMATION SYSTEMS TECHNOLOGY INC;TOSHIBA INFORMATION SYSTEMS (JAPAN) CORP 发明人 WATANABE KOJI;HIDA TOSHIKATSU;OSHIMA TAKASHI
分类号 G06F12/16;G11C16/02;G11C16/06 主分类号 G06F12/16
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