| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting element with reduced operating voltage. <P>SOLUTION: A semiconductor light-emitting element comprises: an n-type first semiconductor layer; a p-type second semiconductor layer; and a light-emitting layer that is provided between the first semiconductor layer and the second semiconductor layer. The light-emitting layer includes a plurality of barrier layers that are stacked along a first direction toward the first semiconductor layer from the second semiconductor layer and contain a nitride semiconductor, and a plurality of well layers that are provided between the adjacent barrier layers and contain a nitride semiconductor containing In. In a method of manufacturing the light-emitting element, formation of the barrier layers comprises the steps of: forming a first low-temperature formation layer by setting the temperature in a reactor to a second temperature lower than a first temperature; and forming a high-temperature formation layer by setting the temperature in the reactor to the first temperature after the formation of the first low-temperature layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
