| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance exposure characteristics. <P>SOLUTION: A semiconductor device is manufactured to have (a) a step for preparing an exposure device comprising (a1) a light-emitting section having a cathode 101 and an anode 102 and emitting the EUV light, (a2) a heating light source 100 which heats the cathode 101 and anode 102, and (a3) an exposure section which irradiates a substrate with the EUV light through a mask. Furthermore, a semiconductor device is manufactured to have (b) a step for heating the cathode 101 and anode 102 by the heating light source 100, (c) a step for applying a voltage between the cathode 101 and anode 102 following to the step (b) and emitting the EUV light by plasma excitation of predetermined atoms between the cathode 101 and anode 102, and (d) a step for guiding the EUV light to the exposure section and exposing a photosensitive film formed above the substrate in the exposure section. <P>COPYRIGHT: (C)2012,JPO&INPIT |
