SEMICONDUCTOR DEVICES INCLUDING STRAINED SEMICONDUCTOR REGIONS AND METHODS OF FABRICATING THE SAME, AND AN ELECTRONIC SYSTEM INCLUDING THE SAME

摘要

PURPOSE: A semiconductor device including a strained semiconductor region, a manufacturing method thereof, and an electronic system including the same are provided to improve etch selectivity by applying a chemical dry etch method to an isotropic dry etch method. CONSTITUTION: A gate pattern(120) is formed on a substrate(110). An amorphous silicon region is formed by injecting IV or VIII group dopants into the substrate. A gate spacer(150) is formed in the sidewall of the gate pattern. A first cavity(160) is formed by firstly etching the substrate and the amorphous silicon region. A second cavity(162) is formed by secondly etching the substrate. A strained semiconductor region is formed in the second cavity.