LIGHT EMISSION DIODE AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A light emitting diode and a manufacturing method thereof are provided to improve light extraction efficiency by increasing a critical angle through a plurality of transparent electrode patterns. CONSTITUTION: An N type semiconductor layer(113) is formed on a base substrate(111). An active layer(114) is formed on the N type semiconductor layer. A P type semiconductor layer(115) is formed on the active layer. A top electrode layer(116) is formed on the P type semiconductor layer. The top electrode layer includes an ohmic contact layer(116a) and a transparent electrode pattern(116b).