发明名称 SPLIT SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a technique which can effectively prevent mixing of the constituting material of a backing plate into the thin film to be deposited due to sputtering, in a split sputtering target obtained by joining a plurality of target members. <P>SOLUTION: In the split sputtering target formed by joining a plurality of target members on a backing plate by low melting point solder, the backing plate is provided with protective bodies along the gaps formed between the joined target members. The target members are made of an oxide semiconductor, and the protective bodies are made of a polymer sheet. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012127005(A) 申请公布日期 2012.07.05
申请号 JP20120066787 申请日期 2012.03.23
申请人 MITSUI MINING & SMELTING CO LTD 发明人 KUBOTA TAKASHI;WATANABE HIROYUKI
分类号 C23C14/34;H01L21/203;H01L21/363 主分类号 C23C14/34
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