发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can reduce a rework rate of a manufacturing process and a percent defective of a product. <P>SOLUTION: A semiconductor device manufacturing method comprises a step of forming a first pattern on a first processing target film on a semiconductor substrate, a first measurement step of measuring a first distance that is a dimension in a predetermined direction of the first pattern, a step of forming a second processing target film on the first pattern, a step of forming a second pattern on a photoresist formed on the second processing target film and a second measurement step of measuring a second distance that is a dimension in a predetermined direction of the second pattern. Quality of the second pattern is determined depending on at least one of the first distance and a calculation value calculated from the first distance and the second distance. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012129303(A) 申请公布日期 2012.07.05
申请号 JP20100278137 申请日期 2010.12.14
申请人 ELPIDA MEMORY INC 发明人 SUGIMURA TAKASHI;YANAGI MASAMICHI
分类号 H01L21/027;G03F9/00;H01L21/3065;H01L21/66;H01L21/8242;H01L27/108 主分类号 H01L21/027
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