| 摘要 |
This semiconductor device (1001) is provided with: a thin film transistor (103) that has a gate electrode (3a), source and drain electrodes (13as, 13ad), and an oxide semiconductor layer (7); and a source bus line (13s). The source electrode, source bus line, and drain electrode contain a first metal element. The oxide semiconductor layer contains a second metal element. When viewed from the direction of a line normal to the substrate, at least part of the source electrode, at least part of the source bus line, and at least part of the drain wiring are superimposed on the oxide semiconductor layer. Low reflection layers (4s, 4d) that contain the first and second metal elements and have lower reflectivity for visible light than the source electrode are formed between the source electrode and the oxide semiconductor layer, between the source bus line and the oxide semiconductor layer, and between the drain wiring and the oxide semiconductor layer. |
