SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure is formed on a semiconductor on insulator (SOI) substrate (1010). The SOI substrate (1010) includes a SOI layer (1011), a buried oxide layer (1012), a semiconductor buried layer (1013) and a semiconductor substrate (1014) from top to bottom in turn. The semiconductor structure includes source/drain regions (1022) formed in the SOI layer (1011); a gate (1021) formed on the SOI layer (1011), wherein the source/drain regions (1022) are located on both sides of the gate (1021); a back gate region (1030) formed of a low resistance region of the semiconductor buried layer (1013); a first isolation structure (1041) and a second isolation structure (1042) located on both sides of the source/drain regions (1022) and extended into the SOI substrate (1010); wherein the first isolation structure (1041) and the second isolation structure (1042) are respectively contacted with the SOI layer (1011) at a first side face (S1) and a second side face (S2), the first isolation structure (1041) is contacted with the semiconductor buried layer (1013) at a third side face (S3), the third side face (S3) is located between the first side face (S1) and the second side face (S2). The semiconductor structure is made a contribution to avoid short circuit between the source/drain regions (1022) and the back gate region (1030).