TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A transistor and a manufacturing method thereof are provided. The transistor includes: a substrate (100) at least including a back gate (103) of the transistor, an insulation layer (104) and a semiconductor layer (105) which are stacked in order, wherein the back gate of the transistor is used for adjusting the threshold voltage of the transistor; a gate stack layer formed on the semiconductor, the gate stack layer including a gate dielectric (111) and a gate electrode (112) formed thereon; sidewall isolating layers (114) formed on the sidewalls of the gate stack; and a source region (115) and a drain region (116) located at both sides of the gate stack layer, wherein the height of the gate stack layer is less than the height of the sidewall isolating layers. The transistor decreases the height of the gate stack layer, and improves the performance of the transistor.