| 摘要 |
PURPOSE: A method and an apparatus for forming an oxide film on carbon film are provided to prevent a reduction of an amorphous carbon film by forming an object-to-be-oxidized layer and a silicon oxide film in in-situ. CONSTITUTION: A silicon substrate(1) is prepared. A carbon film(2) is formed on the silicon substrate. A seed layer(3) is formed on the carbon film by providing amino-silane based gas to a surface of the carbon film. A silicon layer(4) is formed on the seed layer by providing silane based gas to a surface of the seed layer. A silicon oxide film(6) is formed on the silicon layer.
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