| 摘要 |
<p>Disclosed is a method of handling a substrate during processing, e.g. during back-thinning. The method comprising the steps of placing or loading a substrate into a chamber; reducing the pressure within the chamber; placing the substrate onto a substrate holder 10, thereby trapping a volume of air/gas within a void or recess 15 between the substrate and holder; holding the substrate and holder or carrier whilst increasing the pressure in the chamber; and releasing the hold on the substrate and holder. The lower pressure of the air/gas trapped within the void thus holds the substrate in place while processing steps are conducted. The method is particularly suited to the process of thinning of substrates for use in 3D integrated circuits. The altering of pressure could be achieved by heating the air/gas within the chamber. To remove the substrate from the holder or substrate carrier the pressure within the chamber is lowered to an even lower pressure.</p> |
