发明名称 Pressure-contacted power semiconductor module with hybrid pressure accumulator
摘要 The module (1) has load connection elements (40, 42, 44) formed as a metal mold body with pressure-transmitting sections (402, 422, 442) and contact bases (400, 420, 440). The pressure-transmitting sections are arranged approximately parallel to a substrate surface and at a distance from the substrate surface. The bases are passed from the pressure-transmitting sections to a substrate (5). Pressure is transmitted from a pressure element (72) to the pressure-transmitting sections by a hybrid, resilient plastic mold body (80a) with partial regions (800a, 802a) of different spring constants.
申请公布号 EP2341535(B1) 申请公布日期 2012.07.04
申请号 EP20100187782 申请日期 2010.10.15
申请人 SEMIKRON ELEKTRONIK GMBH & CO. KG 发明人 LEDERER, MARCO;POPP, RAINER
分类号 H01L23/48;H01L25/07 主分类号 H01L23/48
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