NON VOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF

摘要

PURPOSE: A nonvolatile memory device and a programming method thereof are provided to program a selection memory cell to have a lower threshold voltage than a target threshold voltage by controlling a potential level or timing of a sensing signal. CONSTITUTION: A memory cell array(100) includes a plurality of bit lines connected to a plurality of cell strings pairs. A plurality of page buffers(210-240) senses the potential of the bit line among a plurality of sensing signals in a program verification operation. A sensing signal generating circuit(300) is connected to a plurality of page buffers. A sensing signal generating circuit generates a plurality of sensing signals with different potentials for a program verification operation.