| 摘要 |
<p>Silicon based back-contacted back junction (BC-BJ) solar modules use the crystalline silicon on glass (CGS) technology approach on epitaxially grown wafers with emitter doping, optionally including surface field doping, followed by plasma texturing and CVD Âbased deposition of surface passivation films to finish the front side of the solar cells. Three epitaxial silicon layers (epi-layers) are grown on a porous release layer (Fig. 1b; 2) which is formed on a silicon donor wafer (Fig. 1b; 1). The first epi-layer 3 is an emitter layer, 0.2 - 5 microns thick, doped to a concentration from 1.1016 1.1020 cm-3 of either an N-type or a P-type doping element; the second epi-layer 4 is a base layer, 10 65 microns thick, doped to a concentration from 1.1015 to 1.1017 cm-3 of a doping element of the opposite conductivity to the first epi-layer; and the third epi-layer 5 is a surface field layer, 0.2 5 micons thick, doped to a concentration from 1.1016 to 1.1020 cm-3 of either a P-type or an N-type doping element. The major surface of the third epi-layer is surface textured 6 and a surface passivation film7 is formed on the major surface of the third epi-layer. The semi-finished cells are separated from the donor wafer (Fig. 1b; 1) by attaching a temporal chuck (Fig. 1c; 9) and cleaving the porous release layer, and laminated onto the front glass substrate (Fig. 1e; 22) of the solar panel such that a smooth and planar back surface is obtained, and back-side surface passivation 11 and electric contacts 14, 15 and cell interconnects are formed.</p> |
