| 摘要 |
A radical cleaning device extends the life of a plasma generation chamber by reducing wear on the inside wall of the plasma generation chamber, is capable of treatment at low temperatures, uses high frequency plasma or high frequency plasma and µ wave plasma, and is provided with: a substrate supporting stage (22) installed in a vacuum chamber (21) and on which a substrate (S) for treatment is placed; a high frequency imparting means or a µ wave imparting means; a plasma generation chamber (27) for generating plasma using the µ wave imparting means or the high frequency imparting means; a first shower plate (28) connected to a high frequency power source (28b) provided below the plasma generation chamber (27); and a second shower plate (29) serving as a discharge electrode provided below the first shower plate (28). Therein, a radical generation chamber (30) defined by the first shower plate (28) and the second shower plate (29) is provided below the first shower plate (28) and above the second shower plate (29), the substrate (S) for treatment is etched, the residual products from etching are removed, and radical cleaning is performed. A radical cleaning method is performed using this device.
|
