| 发明名称 |
GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE |
| 摘要 |
<p>Provided is a gallium nitride-based compound semiconductor light-emitting element, in which the concentration of Mg which is a p-type dopant in a p-GaN layer in which the (10-10) m -plane of a hexagonal wurtzite structure grows is adjusted in a range from 1.0×10 18 cm -3 to 9.0×10 18 cm -3 .</p> |
| 申请公布号 |
EP2472607(A1) |
申请公布日期 |
2012.07.04 |
| 申请号 |
EP20100811444 |
申请日期 |
2010.08.03 |
| 申请人 |
PANASONIC CORPORATION |
发明人 |
KATO, RYOU;FUJIKANE, MASAKI;INOUE, AKIRA;YOKOGAWA, TOSHIYA |
| 分类号 |
H01L33/32 |
主分类号 |
H01L33/32 |
| 代理机构 |
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代理人 |
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| 主权项 |
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