Template, method for manufacturing the template and method for manufacturing vertical type nitride-based semiconductor light emitting device using the template
摘要
<p>Disclosed is a method for manufacturing a template. The method includes growing a first nitride layer containing a Group-III material on a substrate; forming a plurality of etch barriers having different etching characteristics from the first nitride layer on the first nitride layer; forming a pillar-shaped nano structure by etching the first nitride layer in a pattern of the etch barriers using a chloride-based gas; and forming the nitride buffer layer having a plurality of voids formed therein by growing a second nitride layer on top of the nano structure. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed.</p>
申请公布号
EP2472609(A1)
申请公布日期
2012.07.04
申请号
EP20110167422
申请日期
2011.05.25
申请人
SEMI-MATERIALS CO., LTD;PARK, KUN
发明人
OH, CHUNG-SEOK;JANG, SUNG-HWAN;JUNG, HO-IL;PARK, CHI-KWON;PARK, KUN