ORGANOMETALLIC PRECURSORS FOR THIN-FILM DEPOSITION OF METAL OXIDE OR SILICON-CONTAINING METAL OXIDE, AND DEPOSITION PROCESS OF THE THIN FILMS THEREFROM

摘要

PURPOSE: A novel single organic metal precursor compound containing silicon is provided to ensure excellent thin film property and thermal stability. CONSTITUTION: An organic metal precursor compound for depositing metal oxide or metal silicon oxide thin film is denoted by chemical formula 1. The precursor compound is Zr(NMe_2)_2(EtNSiMe_3)_2, Zr(NEtMe)_2(EtNSiMe_3)_2, Zr(NMe_2)_2(^iPrNSiMe_3)_2, Zr(NEtMe)_2(iPrNSiMe_3)_2, Zr(NEtMe)_3(^iPrNSiMe_3), Hf(NMe_2)_2(EtNSiMe_3)_2, Hf(NEtMe)_2(EtNSiMe_3)_2, Hf(NMe_2)_2(iPrNSiMe_3)_2, Hf(NMe_2)_3(iPrNSiMe_3), or Hf(NEtMe)_3(iPrNSiMe_3). A method for preparing the precursor compound comprises: a step of adding organic solvent to metal tetrachloride(MCl_4) and tetrakis(dialkylamino)metal(M(NR_1R_2)_4)compound at -30 to 0°C to prepare tris(dialkylamino)metal chloride(MCl(NR_1R_2)_3)compound solution; a step of adding butyl lithium(n-BuLi) and N-alkyl-trialkylsilane amine(R_3NHSiR_4R_5R_6) to the compound solution at -30 to 0°C; and a step of refluxing and performing reduced pressure distillation.