SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE, AND METHOD OF MANUFACTURING TRENCH GATE

摘要

IGBT 10 comprises an n + -type emitter region 34, an n - -type drift region 26, a p-type body region 28 disposed between the emitter region 34 and the drift region 26, a trench gate 40 extending in the body region 28 from the emitter region 34 toward the drift region 26, and a projecting portion 60 of an insulating material being in contact with a surface of the trench gate 40. At least a part of the projecting portion 60 projects within the drift region 26.