| 摘要 |
PURPOSE: A semiconductor memory device and an operating method thereof are provided to reduce power consumption by variably operating an input and output sense amplifier with the first sensing power or second sensing power. CONSTITUTION: A bit line sense amplifier(100) senses and amplifies a voltage of a bit line and outputs the voltage of the bit line to a first input and output line in response to a column control signal. An input and output line sense amplifier(200) senses and amplifies a voltage of the first input and output line with the first sensing power and outputs the amplified voltage to a second input and output line if a first control signal is activated. The input and output line sense amplifier senses and amplifies the voltage of the first input and output line with the second sensing power smaller than the first sensing power and outputs the amplified voltage to the second input and output line if a second control signal is activated. |
