发明名称 Non-volatile memory system storing data in single-level cell or multi-level cell according to data characteristics
摘要 Provided is a system storing data received from an application or file system in a non-volatile memory system of single-level cells and multi-level cells in accordance with one or more data characteristics. The non-volatile memory system includes a non-volatile memory cell array having a plurality of multi-level cells forming a MLC area and a plurality of single-level cells forming a SLC area, and an interface unit analyzing a characteristic of the write data and generating a corresponding data characteristic signal. A flash transition layer receives the data characteristic signal, and determines whether the write data should be stored in the MLC area or the SLC area based on whether or not the write data will be accessed by the file, or whether the address associated with the write data is frequently updated or not.
申请公布号 US8214582(B2) 申请公布日期 2012.07.03
申请号 US20100711461 申请日期 2010.02.24
申请人 LEE YANG-SUP;TALAWAR PRAKASH;PARK CHAN-IK;SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE YANG-SUP;TALAWAR PRAKASH;PARK CHAN-IK
分类号 G06F13/00;G11C5/06 主分类号 G06F13/00
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