发明名称 |
Microwave/millimeter wave sensor apparatus |
摘要 |
A microwave/millimeter wave sensor apparatus including a planar radiation type oscillator substrate having an inner-layer GND interposed between a front surface side dielectric substrate and a rear surface side dielectric substrate and a pair of conductor patches in an axis-symmetric manner on the side of the front surface layer. A gate and drain of a microwave transistor are respectively connected to the conductor patches to supply power to the gate and the drain of the microwave transistor through a gate-side RF choke circuit and a drain-side RF choke circuit. An impedance line satisfying an oscillation condition is connected to a source and a transmit RF signal in an RF zone as a planar radiation type oscillator is transmitted and a receive RF signal as reflected waves is received from a measured object, thus obtaining an IF signal as the sensing information through homodyne mixing. |
申请公布号 |
US8212718(B2) |
申请公布日期 |
2012.07.03 |
申请号 |
US20080594433 |
申请日期 |
2008.03.31 |
申请人 |
UTAGAWA HITOSHI;MATSUI TOSHIAKI;NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY |
发明人 |
UTAGAWA HITOSHI;MATSUI TOSHIAKI |
分类号 |
G01S13/04;G01S7/03;G01S13/00 |
主分类号 |
G01S13/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|