发明名称 Microwave/millimeter wave sensor apparatus
摘要 A microwave/millimeter wave sensor apparatus including a planar radiation type oscillator substrate having an inner-layer GND interposed between a front surface side dielectric substrate and a rear surface side dielectric substrate and a pair of conductor patches in an axis-symmetric manner on the side of the front surface layer. A gate and drain of a microwave transistor are respectively connected to the conductor patches to supply power to the gate and the drain of the microwave transistor through a gate-side RF choke circuit and a drain-side RF choke circuit. An impedance line satisfying an oscillation condition is connected to a source and a transmit RF signal in an RF zone as a planar radiation type oscillator is transmitted and a receive RF signal as reflected waves is received from a measured object, thus obtaining an IF signal as the sensing information through homodyne mixing.
申请公布号 US8212718(B2) 申请公布日期 2012.07.03
申请号 US20080594433 申请日期 2008.03.31
申请人 UTAGAWA HITOSHI;MATSUI TOSHIAKI;NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY 发明人 UTAGAWA HITOSHI;MATSUI TOSHIAKI
分类号 G01S13/04;G01S7/03;G01S13/00 主分类号 G01S13/04
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