发明名称 |
Forming isolation regions for integrated circuits |
摘要 |
A substrate may have active areas at different levels separated by a mask. Along the mask may be a shallow trench isolation. Along the shallow trench isolation may be a LOCOS isolation. The shape of a substrate transition region between the levels may be tunably controlled. The shallow trench isolation may reduce the bird's beak effect. |
申请公布号 |
US8211778(B2) |
申请公布日期 |
2012.07.03 |
申请号 |
US20080342312 |
申请日期 |
2008.12.23 |
申请人 |
COLOMBO ROBERTO;PIAZZA LUCA DI;MICRON TECHNOLOGY, INC. |
发明人 |
COLOMBO ROBERTO;PIAZZA LUCA DI |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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