发明名称 |
Method for forming semiconductor structure |
摘要 |
The invention provides a method for forming a semiconductor structure. A substrate is provided. A conductive layer is formed on the substrate. A first patterned mask layer is formed on the conductive layer. The conductive layer exposed by the first patterned mask layer is removed to expose a first sidewall of the conductive layer. A doped region is formed in the substrate by a doping step using the first patterned mask layer as a mask. The first patterned mask layer is removed. A second patterned mask layer is formed on the conductive layer. The conductive layer exposed by the second patterned mask layer is removed to expose a second sidewall opposite to the first sidewall of the conductive layer. The second patterned mask layer is removed. |
申请公布号 |
US8211774(B2) |
申请公布日期 |
2012.07.03 |
申请号 |
US20090562968 |
申请日期 |
2009.09.18 |
申请人 |
LO WEN-HSUN;LIU HSING-CHAO;CHERN JIN-DONG;HUANG PO-SHUN;VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
LO WEN-HSUN;LIU HSING-CHAO;CHERN JIN-DONG;HUANG PO-SHUN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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