发明名称 |
Multiple-gate transistors and processes of making same |
摘要 |
A microelectronic device includes a P-I-N (p+ region, intrinsic semiconductor, and n+ region) semiconductive body with a first gate and a second gate. The first gate is a gate stack disposed on an upper surface plane, and the second gate accesses the semiconductive body from a second plane that is out of the first plane. |
申请公布号 |
US8211771(B2) |
申请公布日期 |
2012.07.03 |
申请号 |
US201113216569 |
申请日期 |
2011.08.24 |
申请人 |
PILLARISETTY RAVI;KAVALIEROS JACK;RADOSAVLJEVIC MARKO;CHU-KUNG BENJAMIN;INTEL CORPORATION |
发明人 |
PILLARISETTY RAVI;KAVALIEROS JACK;RADOSAVLJEVIC MARKO;CHU-KUNG BENJAMIN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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