| 摘要 |
PURPOSE: A method for manufacturing a back junction solar cell using plasma doping and diffusing and a solar cell thereof are provided to activate a dopant injected into an emitter area by plasma doping while forming a base region and a front electric field region by dopant heat diffusion, thereby activating dopant injected into an emitter region by plasma doping. CONSTITUTION: A doping mask(102) is formed on the back side of a silicon wafer(100). A p+ region(104) is formed in a part of the silicon wafer except the doping mask. A diffusion preventing film(106) is formed after the doping mask is removed. An n+ region(108) and a front electric field region(110) are formed by a dopant heat diffusing process. Defect compensating films are formed on the front and back sides of the silicon wafer. |
